English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 56568/90363 (63%)
造訪人次 : 11873576      線上人數 : 67
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/109583

    題名: The study of wet etching on GaN surface by potassium hydroxide solution
    作者: Lai, Yung-Yu;Hsu, Shih-Chieh;Chang, Hua-Sheng;Wu, YewChung Sermon;Chen, Ching-Hsiang;Chen, Liang-Yih;Cheng, Yuh-Jen
    關鍵詞: Wet etching;KOH;GaN;LED
    日期: 2017-06
    上傳時間: 2017-02-24 02:11:40 (UTC+8)
    出版者: Springer Netherlands
    摘要: Potassium hydroxide solution was used to etch un-doped GaN grown on the sapphire substrate at 180 and 260 °C. We illustrated the etching phenomenon in detail and probed its mechanism in the wet etching process. By multiplying the planar density and the number of dangling bonds on the N atom, we proposed the etching barrier index (EBI) to describe the difficulty degree of each lattice facet. The raking of EBI will be +c-plane > a-plane > m-plane > −c-plane > (10-1-1) plane > r-plane. Combining the EBI with SEM results, we thoroughly studied the whole etching process. We confirmed that in our research, KOH wet etching on GaN starts from the r-plane instead of the +c-plane or −c-plane, which differs from other studies. We also found that during the high-temperature etching process, there are two etching approaches. In one, the etching begins vertically from the top to the bottom, then horizontally, and finally reversely from the bottom to the top. In the other, etching pits will develop into a hexagonal hole of the sidewall of m-plane.
    關聯: Research on Chemical Intermediates 43(6), p.3563–3572
    DOI: 10.1007/s11164-016-2430-1
    顯示於類別:[化學工程與材料工程學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋