Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/109426

請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/109426

題名:	Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots
作者:	Antaryami Mohanta;Der-Jun Jang;Shu-Kai Lu;Dah-Chin Ling;J. S. Wang
日期:	2017-01-19
上傳時間:	2017-02-14 02:11:06 (UTC+8)
出版者:	A I P Publishing LLC
摘要:	Effect of GaAs spacer layer thickness (dGaAs) on carrier capture, and the relaxation process is studied in multi-stacked InAs/GaAs quantum dots by photoluminescence and time-resolved photoluminescence. Auger scattering is the dominating process for carrier relaxation above dGaAs of 15 nm. At dGaAs of 10 nm, the carrier relaxation process is faster due to the combined effect of both single longitudinal optical phonon and Auger scattering resulting in higher photoluminescence intensity. The photoluminescence rise time corresponding to carrier capture and relaxation in quantum dots is longer at 3.06 eV excitation than that at 1.53 eV due to the effect of intervalley scattering in GaAs.
關聯:	Applied Physics Letters 110(3), 033107(4 pages)
DOI:	10.1063/1.4974221
顯示於類別:	[物理學系暨研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
Energy relaxation dynamics in vertically coupled multi-stacked InAs GaAs quantum dots.pdf		1173Kb	Adobe PDF	3	檢視/開啟
index.html		0Kb	HTML	194	檢視/開啟

在機構典藏中所有的資料項目都受到原著作權保護.

TAIR相關文章