Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/109426

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题名:	Energy relaxation dynamics in vertically coupled multi-stacked InAs/GaAs quantum dots
作者:	Antaryami Mohanta;Der-Jun Jang;Shu-Kai Lu;Dah-Chin Ling;J. S. Wang
日期:	2017-01-19
上传时间:	2017-02-14 02:11:06 (UTC+8)
出版者:	A I P Publishing LLC
摘要:	Effect of GaAs spacer layer thickness (dGaAs) on carrier capture, and the relaxation process is studied in multi-stacked InAs/GaAs quantum dots by photoluminescence and time-resolved photoluminescence. Auger scattering is the dominating process for carrier relaxation above dGaAs of 15 nm. At dGaAs of 10 nm, the carrier relaxation process is faster due to the combined effect of both single longitudinal optical phonon and Auger scattering resulting in higher photoluminescence intensity. The photoluminescence rise time corresponding to carrier capture and relaxation in quantum dots is longer at 3.06 eV excitation than that at 1.53 eV due to the effect of intervalley scattering in GaAs.
關聯:	Applied Physics Letters 110(3), 033107(4 pages)
DOI:	10.1063/1.4974221
显示于类别:	[物理學系暨研究所] 期刊論文

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