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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/109334


    Title: Interface engineering: broadband light and low temperature gas detection abilities using a nano-heterojunction device
    Authors: Chien-Min Chang;Ching-Han Hsu;Yi-Wei Liu;Tzu-Chiao Chien;Chun-Han Sung;Ping-Hung Yeh
    Date: 2015-10-21
    Issue Date: 2017-01-17 02:10:23 (UTC+8)
    Abstract: Herein, we have designed a nano-heterojunction device using interface defects and band bending effects, which can have broadband light detection (from 365–940 nm) and low operating temperature (50 °C) gas detection abilities. The broadband light detection mechanism occurs because of the defects and band bending between the heterojunction interface. We have demonstrated this mechanism using CoSi2/SnO2, CoSi2/TiO2, Ge/SnO2 and Ge/TiO2 nano-heterojunction devices, and all these devices show broadband light detection ability. Furthermore, the nano-heterojunction of the nano-device has a local Joule-heating effect. For gas detection, the results show that the nano-heterojunction device presents a high detection ability. The reset time and sensitivity of the nano-heterojunction device are an order faster and larger than Schottky-contacted devices (previous works), which is due to the local Joule-heating effect between the interface of the nano-heterojunction. Based on the abovementioned idea, we can design diverse nano-devices for widespread use.
    Relation: Nanoscale 7, pp.20126-20131
    DOI: 10.1039/C5NR05879A
    Appears in Collections:[物理學系暨研究所] 期刊論文

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