Magnetic quantization in monolayer GaAs

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 會議論文 > Item 987654321/109239

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/109239

Title:	Magnetic quantization in monolayer GaAs
Authors:	Chung, Hsien-Ching;Ho, Ching-Hong;Chang, Cheng-Peng;Chen, Chun-Nan;Chiu, Chih-Wei;Lin, Ming-Fa
Keywords:	two-dimensional materials;GaAs;magneto-electronic property;Landau quantization;post-graphene
Date:	2017-01-16
Issue Date:	2017-01-13 02:11:27 (UTC+8)
Abstract:	Since 2004, the discovery of graphene has opened the possibility of two-dimensional materials both in technological applications and fundamental researches. However, the gapless feature limits the applications of pristine graphene. Recently, researchers have new opportunities and challenges for post-graphene two-dimensional nanomaterials, such as silicene (Si), germanene (Ge), and tinene (Sn), owing to the sufficiently large energy gap (of the size comparable to the thermal energy at room temperature). Apart from the group IV elements, the buckled honeycomb lattices of the binary compositions of group III-V elements have been proposed as a new class of post-graphene two-dimensional nanomaterials. In this study, the generalized tight-binding model including the spin-orbital interactions is utilized to investigate the essential properties of monolayer GaAs. The magnetic quantization, band structure, wave function, and density of states are discussed in detail. (One of us (Hsien-Ching Chung) thanks Ming-Hui Chung and Su-Ming Chen for financial support. This work was supported in part by the Ministry of Science and Technology of Taiwan under grant number MOST 105-2811-M-017-003.)
Relation:	2017年中華民國物理年會
Appears in Collections:	[物理學系暨研究所] 會議論文

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