Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3−δ

doi:10.1016/j.ceramint.2015.11.076

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Journal Article > Item 987654321/108298

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/108298

Title:	Thermoelectric property and x-ray absorption near edge structure studies on Si-doped CaMnO3−δ
Authors:	Liu, Chia-Jyi;Bhaskar, Ankam;Yuan, J.J.;Yang, Zong-Ren;Chen, Shih-Show;Chen, Huang-Chin;Liao, Fan-Wei;Lin, Yu Ting;Yeh, Ping Hung;Lai, Chun-Yen;Chang, Ching-Lin
Keywords:	A. Sintering;B. Electron microscopy;C. Electrical conductivity;Thermal properties;Thermal conductivity
Date:	2015-11-22
Issue Date:	2016-11-23 02:10:32 (UTC+8)
Publisher:	Pergamon Press
Abstract:	We report electrical resistivity, thermopower and Ca K-, Mn L2,3- and O K-edges x-ray absorption near edge structure (XANES) studies on CaMn1−xSixO3−δ with x=0, 0.02, and 0.05. The transport properties measurements indicate that the sample of x=0.02 has the lowest electrical resistivity compared to the samples of x=0 and 0.05. Meanwhile, the temperature dependence of thermopower behaves significantly different for samples of x=0.02 and 0.05. These unusual phenomena are elucidated based on the charge transfer equilibrium principle together with the XANES results, which show that the Si substitution for Mn appears to generate an electron doping effect and lattice distortion. Among the samples, CaMn0.98Si0.02O3−δ exhibits the highest figure of merit of 0.0128 at 300 K. This value represents an improvement of about 52% compared to pristine CaMnO3−δ.
Relation:	Ceramics International 42(3), pp.4048–4053
DOI:	10.1016/j.ceramint.2015.11.076
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	291	View/Open

Loading...