English  |  正體中文  |  简体中文  |  Items with full text/Total items : 49521/84656 (58%)
Visitors : 7588575      Online Users : 59
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/108280


    Title: Synthesis of hybrid diamond films via two-step microwave enhanced chemical vapor deposition process for enhancing the electron field emission properties
    Authors: Saravanan, Adhimoorthy;Huang, Bohr-Ran;Manoharan, Divinah;Dong, Chung-Li;Lin, I-Nan
    Keywords: Hybrid diamond films;Bias-enhanced growth process;Electron field emission properties;Nanographite
    Date: 2016-09-13
    Issue Date: 2016-11-16 02:10:51 (UTC+8)
    Publisher: Elsevier S.A.
    Abstract: Hybrid diamond materials (HBDs) were synthesized using a two-step bias enhanced nucleation and growth process (BEN-BEG). The secondary BEG process efficiently altered the granular structure of the underlying ultrananocrystalline diamond (UNCD) films, rather than growing a nanocrystalline diamond (NCD) film on the top of the UNCD layer. Nanographite clusters were formed when the coalescence of ultra-small diamond grains was induced due to the secondary BEG process that enhanced the transport efficiency of electrons and thus improved the electron field emission (EFE) properties of the HBD films. However, the depth of interaction increased with the magnitude of the bias voltage applied in the secondary BEG process. Therefore, large enough bias voltage (− 300 V) is required in the secondary BEG process to convert the whole thickness of UNCD films into HBD ones. The EFE properties of HBD− 300 V films can be turned on at a low field of E0 = 3.36 V/μm and attained a high EFE current density of Je = 4.57 mA/cm2 at an applied field of 6.4 V/μm. The synthesis of HBD films with high conductivity and excellent EFE behavior enables them to be better EFE emitters with improved performance in flat panel display applications.
    Relation: Diamond and Related Materials 63, pp.211-217
    DOI: 10.1016/j.diamond.2015.12.018
    Appears in Collections:[物理學系暨研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML55View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.


    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback