淡江大學機構典藏:Item 987654321/107889
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    題名: Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment
    作者: Hsueh, H. C.;Warren, M. C.;Vass, H.;Ackland, G. J.;Clark, S. J.;Crain, J.
    日期: 1996-06-01
    上傳時間: 2016-10-13 02:10:27 (UTC+8)
    出版者: American Physical Society
    摘要: The structural and vibrational properties of the prototypical layered semiconductor germanium sulfide (GeS) have been studied under pressure using a combination of high-resolution x-ray powder diffraction, Raman scattering, and ab initio simulation. The theoretically and experimentally determined pressure response of the static and dynamical properties are in good agreement with each other. No structural phase transformation is found up to 94 kbar. Inspection of the calculated eigenvectors of zone center phonons at several pressures indicates that the validity of the rigid-layer mode approximation is appropriate only at near-ambient pressure conditions and breaks down under compression.
    關聯: Phys. Rev. B 53(22), pp.14806-14817
    DOI: 10.1103/PhysRevB.53.14806
    顯示於類別:[物理學系暨研究所] 期刊論文

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