High-pressure effects in the layered semiconductor germanium selenide

機構典藏 > College of Sciences > Graduate Institute & Department of Physics > Journal Article > Item 987654321/107887

Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/107887

Title:	High-pressure effects in the layered semiconductor germanium selenide
Authors:	Hseuh, H. C.;Vass, H.;Clark, S. J.;Ackland, G. J.;Crain, J.
Date:	1995-06-15
Issue Date:	2016-10-13 02:10:24 (UTC+8)
Publisher:	American Physical Society
Abstract:	We report the results of ab initio total-energy pseudopotential calculations, high-pressure angle-dispersive powder x-ray diffraction, and vibrational spectroscopy measurements on the IV-VI layered semiconductor germanium selenide (GeSe). The calculated hydrostatic pressure dependence of the crystal structure is found to be in good agreement with the results of high-resolution x-ray structural studies. In contrast to previous reports, no evidence of a pressure-induced first-order structural phase transition is found up to 130 kbar. However, a metallization transition is predicted in our electronic structure calculations. This is consistent with reports of a large resistivity drop at high pressure. The rigid-layer vibrational shear mode is also investigated by ab initio methods within the rigid-layer mode approximation and the frequency is found to be in fair agreement with our Raman scattering results at ambient pressure. At higher pressures the calculated frequency is substantially overestimated in the calculations.
Relation:	Phys. Rev. B 51(23), pp.16750-16760
DOI:	10.1103/PhysRevB.51.16750
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

Files in This Item:

File	Description	Size	Format
High-pressure effects in the layered semiconductor germanium selenide.pdf		875Kb	Adobe PDF	1	View/Open
index.html		0Kb	HTML	142	View/Open