English  |  正體中文  |  简体中文  |  Items with full text/Total items : 58335/91896 (63%)
Visitors : 2071      Online Users : 103
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/107084

    Title: A High-Resolution All-Digital Temperature Sensor with Process Variation Compensation
    Authors: Yu-Lung Lo;Wei-Tsuen Chen;Yu-Ting Chiu;Wei-Bin Yang
    Keywords: CMOS temperature sensor;thermal sensor;ring oscillator;all digital;process variation compensation
    Date: 2016-05-25
    Issue Date: 2016-08-15
    Publisher: MYU
    Abstract: In this paper, we propose a high-resolution all-digital complementary metal–oxide semiconductor (CMOS) temperature sensor with a ring oscillator for temperature sensing and power supply immunity, a time amplifier for process variation compensation, and serial digital output for low area consumption. Because of the linearity of its high output cycle–temperature, the sensor has excellent measurement accuracy; the architecture of the sensor effectively decreased power supply sensitivity, and the parallel-to-serial converter considerably reduced area consumption. In addition, the high resolution is determined by the time amplifier with external digital codes. The determination of resolution using the time amplifier and the process variation compensation were accomplished simultaneously. The temperature sensor was fabricated using 0.18-μm standard CMOS technology, and the core circuit occupies an area of 0.001 mm2. The experimental results indicated that the energy per conversion rate was only 10 nJ at a supply voltage of 1.8 V; the conversion rate was 15–30 k samples/s, and the error in temperature sensing ranged from −1.58 to +1.6 °C with a resolution higher than 0.1 °C after one-point calibration in the −40 to +130 °C range. With these advantages, the temperature sensor is suitable for application in large integrated circuit (IC) systems and three-dimensional ICs.
    Relation: Sensors and Materials 28(5), pp.395–402
    DOI: 10.18494/SAM.2016.1190
    Appears in Collections:[Graduate Institute & Department of Electrical Engineering] Journal Article

    Files in This Item:

    File Description SizeFormat

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback