淡江大學機構典藏:Item 987654321/105754
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    題名: 透明氧化銦錫薄膜之特性研究
    其他題名: Characteristics of transparent conductive ITO films
    作者: 田力仁;Tian, Li-Ren
    貢獻者: 淡江大學機械與機電工程學系碩士班
    林清彬
    關鍵詞: 氧化銦錫;;;紅藍移;導電率;doping;Indium Tin Oxide;Ti;Zn;Blue/Red shift;Conductivity
    日期: 2015
    上傳時間: 2016-01-22 15:04:25 (UTC+8)
    摘要: 本研究利用共析出法及溶劑熱法成功致被摻雜鈦與鋅離子之氧化銦錫粉末,摻雜濃度分別為4at%、6at%及8at%,並探討摻雜對粉體光學及電學性質影響。由XRD繞射分析知摻雜元素不會改變氧化銦錫晶體結構。經由溶劑熱處理後,粉體氧空缺增加形成淡藍或深藍色。由全光譜儀分析知,摻雜鈦及鋅離子會增加其能隙,呈現出藍移的趨勢。由霍爾電壓分析知,載子濃度隨摻雜量提升而上升,遷移率則是相反;摻雜鈦及鋅離子對導電率沒有明顯影響。
    The present study has been successful prepared the Ti and Zn -doped ITO powders by the methods of co-precipitation and solvothermal, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Ti and Zn -doped ITO powders tended to increase and then the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Ti and Zn –doped ITO powders have no significant effect on the conductivity.
    顯示於類別:[機械與機電工程學系暨研究所] 學位論文

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