單層原子層積法-鎳金屬前驅物的合成與應用 : 非共軛式偶極性茚並茚衍生物的設計與合成

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Title:	單層原子層積法-鎳金屬前驅物的合成與應用 : 非共軛式偶極性茚並茚衍生物的設計與合成
Other Titles:	Synthesis of ni complexes and its ald application : design and synthesis of non-conjugate dipolar dihytroindenoindene derivatives
Authors:	黃怡梅;Huang, Yi-Mei
Contributors:	淡江大學化學學系碩士班謝仁傑;Hsieh, Jen-Chieh
Keywords:	原子沉積法;非共軛立體結構;Atomic layer deposition method (ALD);Ni (dmap) 2;non-conjugated
Date:	2015
Issue Date:	2016-01-22 14:51:59 (UTC+8)
Abstract:	第一部分: 原子沉積法(atomic layer deposition, ALD)沉積出來的薄膜具有覆蓋率佳與厚度均勻等優點，以鎳金屬前驅物Ni(dmap)2合成做為討論，比較Ni(dmamb)2和Ni(dmap)2這兩者之間的配位基的性質差異，並將前驅物送去做原子沉積製成的測試，經過多次不同條件下製程改良，目前在基板上可以觀察到密集的Ni島狀晶體的結構，之後將研究基板參數調整使沉積的薄膜更為理想。第二部分: 我們將2,2''-(indeno[2,1-a]indene-5,10-diylidene)dimalononitrile和N,N-diphenylfuran-2-amine利用4+2架橋反應合成非共軛式偶極性立體結構，希望透過非共軛特性在光照後所激發的激子具有電荷分離的效果，期望透過這個現象利用在太陽能電池可以增加轉換效率。 Part I: Atomic layer deposition method (ALD) deposited film have good thickness coverage rate and uniformity. With Ni(dmap)2 synthesis as discussed in comparative Ni(dmamb)2 and Ni(dmap)2 difference properties of the ligand. And we sent the Ni(dmap)2 precursor to do atomic deposition method, at several various conditions processes improved, we can observed densely Ni crystal island on the substrate. We research the substrate parameter adjustment let the film deposited more ideal. Part II: In this research we use 2,2''-(indeno[2,1-a]indene-5,10-diylidene)dimalononitrile and N,N-diphenylfuran-2-amine to do 4+2 reaction synthesized non-conjugated bridging three-dimensional structure, we hoped this non-conjugated characteristic after light effect excited exciton have charge separation, through this phenomena can be increase efficiency of solar cells.
Appears in Collections:	[Graduate Institute & Department of Chemistry] Thesis

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