Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

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Title:	Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films
Authors:	Saravanan, A.;Huang, B. R.;Sankaran, K. J.;Dong, C. L.;Tai, N. H.;Lin, I. N.
Date:	2015-03-18
Issue Date:	2016-01-06 11:03:46 (UTC+8)
Abstract:	The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E0 = 2.6 V/μm and large EFE current density of Je = 3.2 mA/cm2 (at 5.3 V/μm).
Relation:	Applied Physics Letters 106(11), 111602
DOI:	10.1063/1.4915488
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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