English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 50123/85142 (59%)
造訪人次 : 7909145      線上人數 : 74
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/104576


    題名: Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films
    作者: Saravanan, A.;Huang, B. R.;Sankaran, K. J.;Dong, C. L.;Tai, N. H.;Lin, I. N.
    日期: 2015-03-18
    上傳時間: 2016-01-06 11:03:46 (UTC+8)
    摘要: The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E0 = 2.6 V/μm and large EFE current density of Je = 3.2 mA/cm2 (at 5.3 V/μm).
    關聯: Applied Physics Letters 106(11), 111602
    DOI: 10.1063/1.4915488
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML99檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋