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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/104544


    Title: Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding
    Authors: Chen, Y.J.;Chang, C.C.;Lin, H.Y.;Hsu, Shih-Chieh;Liu, C.Y.
    Date: 2012-01-01
    Issue Date: 2016-01-06 11:01:52 (UTC+8)
    Abstract: Vertical thin-GaN LED was successfully fabricated on the GaN LED epi-layers grown on the patterned-sapphire substrate with the pyramidal pattern by low-temperature Cu/Sn/Ag wafer bonding at 150 °C. An inverted pyramidal pattern formed on the n-GaN surface after the GaN epi-layer was transferred onto Si wafer, which resulted from the pyramidal pattern on the patterned-sapphire substrate. The inverted pyramidal pattern has an equivalent function with roughening the n-GaN surface. With higher inverted pyramidal pattern coverage, the light extraction efficiency can be greatly enhanced. In addition, we found that the 4-fold increase (from 13.6% to 53.8%) in the pyramidal pattern coverage on patterned-sapphire substrate only gives the GaN LED epi-layer about 5.7% enhancement in the internal quantum efficiency.
    Relation: Microelectronics Reliability 52(2), pp.381–384
    DOI: 10.1016/j.microrel.2010.11.010
    Appears in Collections:[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

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