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    題名: Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques
    作者: Mukta V. Limaye;Chen, S. C.;Lee, C. Y.;Chen, L. Y.;Shashi B. Singh;Shao, Y. C.;Wang, Y. F.;Hsieh, S. H.;Hsueh, H. C.;Chiou, J. W.;Chen, C. H.;Jang, L. Y.;Cheng, C. L.;Pong, W. F.;Hu, Y. F.
    貢獻者: 淡江大學物理學系
    關鍵詞: sub-band gap;sulfur hyperdoped silicon
    日期: 2015-06-22
    上傳時間: 2015-06-25 00:04:21 (UTC+8)
    出版者: London: Nature Publishing Group
    摘要: The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2− (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2− species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2−, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples.
    關聯: Scientific Reports 5, 11466
    DOI: 10.1038/srep11466
    顯示於類別:[物理學系暨研究所] 期刊論文

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