English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 55597/89938 (62%)
造访人次 : 11049436      在线人数 : 70
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻

    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/103354

    题名: Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques
    作者: Mukta V. Limaye;Chen, S. C.;Lee, C. Y.;Chen, L. Y.;Shashi B. Singh;Shao, Y. C.;Wang, Y. F.;Hsieh, S. H.;Hsueh, H. C.;Chiou, J. W.;Chen, C. H.;Jang, L. Y.;Cheng, C. L.;Pong, W. F.;Hu, Y. F.
    贡献者: 淡江大學物理學系
    关键词: sub-band gap;sulfur hyperdoped silicon
    日期: 2015-06-22
    上传时间: 2015-06-25 00:04:21 (UTC+8)
    出版者: Springer Nature
    摘要: The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calculation. S 2p XPS spectra reveal that the S-hyperdoped Si with the greatest (~87%) sub-band gap absorption contains the highest concentration of S2− (monosulfide) species. Annealing S-hyperdoped Si reduces the sub-band gap absorptance and the concentration of S2− species, but significantly increases the concentration of larger S clusters [polysulfides (Sn2−, n > 2)]. The Si K-edge XANES spectra show that S hyperdoping in Si increases (decreased) the occupied (unoccupied) electronic density of states at/above the conduction-band-minimum. VB-PES spectra evidently reveal that the S-dopants not only form an impurity band deep within the band gap, giving rise to the sub-band gap absorption, but also cause the insulator-to-metal transition in S-hyperdoped Si samples. Based on the experimental results and the calculations by density functional theory, the chemical state of the S species and the formation of the S-dopant states in the band gap of Si are critical in determining the sub-band gap absorptance of hyperdoped Si samples.
    關聯: Scientific Reports 5, 11466
    DOI: 10.1038/srep11466
    显示于类别:[物理學系暨研究所] 期刊論文


    档案 描述 大小格式浏览次数
    S-Si-(SciRept)-Paper0623(15).pdf1689KbAdobe PDF224检视/开启
    Understanding of sub-band gap absorption of femtosecond-laser sulfur hyperdoped silicon using synchrotron-based techniques.pdf1886KbAdobe PDF32检视/开启



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈