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    题名: Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure
    作者: Antaryami Mohanta;Wang, Shiang-Fu;Young, Tai-Fa;Yeh, Ping-Hung;Ling, Dah-Chin;Lee, Meng-En;Jang, Der-Jun
    贡献者: 淡江大學物理學系
    日期: 2015-03-28
    上传时间: 2015-05-14 23:53:38 (UTC+8)
    出版者: Melville: A I P Publishing LLC
    摘要: Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τr, extracted from the TRPL profile shows ∼T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.
    關聯: Journal of Applied Physics 117(14), 144503(6 pages)
    DOI: 10.1063/1.4917217
    显示于类别:[物理學系暨研究所] 期刊論文

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