English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62572/95237 (66%)
造访人次 : 2543454      在线人数 : 491
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻

    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/103038

    题名: Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure
    作者: Antaryami Mohanta;Wang, Shiang-Fu;Young, Tai-Fa;Yeh, Ping-Hung;Ling, Dah-Chin;Lee, Meng-En;Jang, Der-Jun
    贡献者: 淡江大學物理學系
    日期: 2015-03-28
    上传时间: 2015-05-14 23:53:38 (UTC+8)
    出版者: Melville: A I P Publishing LLC
    摘要: Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τr, extracted from the TRPL profile shows ∼T 3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.
    關聯: Journal of Applied Physics 117(14), 144503(6 pages)
    DOI: 10.1063/1.4917217
    显示于类别:[物理學系暨研究所] 期刊論文


    档案 描述 大小格式浏览次数
    Observation of weak carrier localization in green emitting InGaN GaN multi-quantum well structure.pdf1459KbAdobe PDF1检视/开启



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈