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    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/102881

    題名: Evolution of hot carrier dynamics in graphene with the Fermi level tuned across the Dirac point
    作者: Lin, Kuan-Chun;Li, Ming-Yang;Ling, D. C.;Chi, C. C.;Chen, Jeng-Chung
    貢獻者: 淡江大學物理學系
    日期: 2015-03-30
    上傳時間: 2015-05-11 01:38:55 (UTC+8)
    出版者: College Park: American Physical Society
    摘要: The ultrafast dynamics of photoexcited carriers closely depends on the excitation processes pertaining to the energy band of the materials and the relevant relaxation pathway relies on the interactions between hot carriers and lattice phonons. By using ultrafast optical-pump terahertz (THz)-probe spectroscopy with an ion-gel gate to tune the Fermi energy level EF in graphene, we are able to reveal the relaxation dynamics of hot carriers at different EF. It is found that the relaxation time increases while the pump-induced differential transmission decreases as EF approaches the Dirac point. Through self-consistent model calculations, we quantitatively interpret that a temperature-dependent scattering rate is responsible for a negative photoinduced conductivity, and the relaxation transient directly manifests the Dirac spectrum dependence of the optical phonon emission and the carrier scattering rate. More interestingly, the scattering rate of hot carriers also exhibits a strong EF dependence, which is the most likely to originate from charged impurities inevitably present in graphene. The diminution of photoresponse efficiency across the Dirac point implies that the graphene-based optoelectronic devices may be operable only in the highly doped regime.
    關聯: Physical Review B 91(12), 125440
    DOI: 10.1103/PhysRevB.91.125440
    顯示於類別:[物理學系暨研究所] 期刊論文


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