Highly tunable quantum Hall far-infrared photodetector by use of GaAs/Al x Ga1 − x As-graphene composite material

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Title:	Highly tunable quantum Hall far-infrared photodetector by use of GaAs/Al x Ga1 − x As-graphene composite material
Authors:	Tang, Chiu-Chun;Ling, D. C.;Chi, C. C.;Chen, Jeng-Chung
Contributors:	淡江大學物理學系
Date:	2014-11-03
Issue Date:	2015-05-11 01:35:38 (UTC+8)
Publisher:	Melville: A I P Publishing LLC
Abstract:	We have developed a highly tunable, narrow band far-infrared (FIR) photodetector which utilizes the characteristic merits of graphene and two-dimensional electron gas (2DEG) in GaAs/Al x Ga1 − xAs heterostructure in the Quantum Hall states (QHS). The heterostructure surface is covered with chemical vapor-deposited graphene, which functions as a transparent top-gate to vary the electron density of the 2DEG. FIR response observed in the vicinity of integer QH regime can be effectively tuned in a wide range of 27–102 cm−1 with a bias voltage less than −1 V. In addition, we have found that the presence of graphene can genuinely modulate the photoresponse. Our results demonstrate a promising direction for realizing a tunable long-wavelength FIR detector using QHS in GaAs 2DEG/ graphene composite material.
Relation:	Applied Physics Letters 105, 181103
DOI:	10.1063/1.4901041
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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