Optical spectroscopic investigation of m-plane GaN thin films

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/102879

請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/102879

題名:	Optical spectroscopic investigation of m-plane GaN thin films
作者:	Antaryami Mohanta;Tzeng, Yan-Zhi;Lee, Meng-En;Ling, Dah-Chin;Wang, Ying-Chieh;Lo, Ikai;Jang, Der-Jun
貢獻者:	淡江大學物理學系
日期:	2014-09-01
上傳時間:	2015-05-11 01:31:17 (UTC+8)
出版者:	Washington, DC: Optical Society of America
摘要:	M-plane GaN thin films grown on γ-LiAlO2 substrate were investigated at different temperatures by photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. The origin of two distinct emissions, P1 and P2 observed in the PL spectra were established by analyzing their PL and TRPL properties at different temperatures. The P1 emission is attributed to the excitons bound to the stacking faults (SFs). The P2 shows an anomalous “S-shaped” emission shift with increasing temperature (T), and the associated mechanism is discussed. The radiative life time ‘τr’ for P2 emission exhibits the T 3/2 dependence at higher temperatures and deviates at lower temperatures whereas the radiative life time ‘τr’ for P1 emission does not show the T 3/2 dependence with temperature. The polarization-dependent PL study reveals that P2 emission involves free holes in the transition at room temperature.
關聯:	Optical Materials Express 4(9), pp.1920-1931
DOI:	10.1364/OME.4.001920
顯示於類別:	[物理學系暨研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html	館藏資訊	0Kb	HTML	177	檢視/開啟
index.html		0Kb	HTML	179	檢視/開啟
Optical spectroscopic investigation of m-plane GaN thin films, Opt Mater Express 4, 1920 (2014).pdf		1257Kb	Adobe PDF	525	檢視/開啟

在機構典藏中所有的資料項目都受到原著作權保護.

TAIR相關文章