奈米線之應用可說是包羅萬象，例如：奈米發電機、奈米邏輯線路還 有奈米檢測元件。本實驗室開發出一個嶄新物理機制的奈米元件，有別於 傳統單純利用奈米元件的高表體比特性，僅利用奈米表面高敏感性檢測相 關之待測物。本研究團隊利用蕭基能障的半導體物理概念，設計出一系列 紫外光與氣體檢測奈米元件，其檢測能力比傳統奈米元件的檢測能力高數 十倍至數百倍之多。本研究計畫將著重在奈米接面與蕭基能障的研究上， 希望可以結合光譜與電性之同步量測探討奈米接面的蕭基能障物理變化 機制。 本計畫第一、二年將利用先前對奈米結構研究經驗，主要研究目的為 對蕭基接觸奈米元件的物理機制有更多的了解。此部份研究主要著重蕭基 接觸介面的電性量測與半導體物理研究，藉由結合實驗與理論分析，希望 對蕭基接觸能障有更深入的了解。設計不同元件參數之蕭基接觸 (Schottky contact)奈米檢測元件，探討元件參數對蕭基能障的影響與檢 測能力的變化並量化帶電分子電量對應蕭基能障的改變量。 本計畫第二、三年之研究重點將注重在結合不同的分析技術對蕭基接 觸奈米元件作更深入的探討與量子元件的開發，縮小蕭基接觸面積達到奈 米等級並結合光學與電學量測技術，透過變溫與帶電分子之導入。進一步 研究蕭基能障的物理機制在奈米尺寸下之量子現象。 One dimension nanostructures represents an exciting and rapidly expanding research area that crosses the borders between the physical, chemical, material engineering, biological and life science. This proposal will focus on the fundamental and application research. Using Schottky contact effect, the UV, biologically-/chemically-charged molecules sensors have great sensitivity, tens or hundreds times than Ohmic contact devices. This proposal will study the mechanism of the Schottky barrier height variation by using Spectroscopy and Electrical measurement. Base on the previous researches, we will design Schottky contact nanodevices with various device parameters, to study the detection mechanism. By using Spectroscopy and Electrical measurement, we may obtain more information from the Schottky barrier variation. Besides, we will push our limits, devote our attention to develop nano Schottky contact device. We would like to study if the quantum effect can be found in our Schottky contact device, when the contact area approaches to nano scale. We will study the physical principle and operation mechanism of the nano-devices at different temperature and charged molecules, and design new nano-devices by using the mechanism that we obtain from this research.
