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    题名: 利用表面工程控制蕭特基能障高度 : 增加減少金屬氧化物感應器之表面電位
    其它题名: Controlling the schottky barrier height by interface engineering : intensifier/abatement the metal oxide nanosensor surface potential
    作者: 廖山徵;Liao, Shen-Cheng
    贡献者: 淡江大學物理學系碩士班
    葉炳宏;Yeh, Ping-Hung
    关键词: 二氧化錫;奈米線;蕭特基元件;蕭特基能障;表面電位;表面改質工程;Tinoxide;nanowire;Schottky Device;Schottky Barrier Height;Surface Potential;Surface Engineering
    日期: 2014
    上传时间: 2015-05-04 09:47:47 (UTC+8)
    摘要: 本研究使用表面改質的方式,調控蕭特基能障,提升元件於較低溫時(100 ℃下)之氣體感測能力。本研究使用一氧化碳氣體作為待測氣體,進行材料表面改質之探討,於蕭特基介面官能化不同分子鏈長之化合物(5-己烯基三氯矽烷/ 10-十一碳烯基三氯矽烷)以調控蕭特基能障變化。在60 ℃時,元件官能化10-十一碳烯基三氯矽烷後,電流變化量(93 nA)與未官能化(38 nA)時相比,增加244%,而元件官能化5-己烯基三氯矽烷後,電流變化量(296 nA)與未官能化時相比,能夠增加779%,元件於官能化後皆能增加元件電流輸出,以官能化5-己烯基三氯矽烷效果較佳。而蕭特基能障變化量於元件官能化10-十一碳烯基三氯矽烷後為33 meV,與未官能化時蕭特基能障變化量為18 meV相比,為增加之趨勢。操作溫度於60-80 ℃時,元件於官能化後與未官能化時之電流變化趨勢相反,官能化後之電流變化量為負值,未官能化之電流變化量為正值,由於表面改質的影響,元件於官能化後感測機制不同,因此造成此現象。
    In this research, schottky barrier height (SBH) can be tuned by surface engineering. In order to improve the sensing ability of schottky NW device under 100℃, we use two kinds of chemical solvent which are different from chemical length in structure (10-Undecenyltrichlorosi-
    lane/ 5-Hexenyltrichlorosilane) to functionalize NW. To prove the surface engineering effect, we can run the gas detection and find out the mechanism. In the result, the SBH variation of functionalized (10-Undecenyltrichlorosilane) NW device is 33 meV, and the SBH variation of unfunctionalized NW device is 18 meV in 60℃.The functionalized NW device can be increased 15 meV. After functionalized (5-Hexenyltrichlorosilane) NW device, the current variation can be increased larggest (779%) than unfunctionlized NW device in 60℃. The mechanism of functionalized NW device is different from unfunctionalized in 60-80℃,which show the current variation is negative when NW device functionalized. And the mechanism of functionalized NW device is the same as unfunctionalized NW device in 90-100℃. Surface functionalization can actually improve the NW sensing ability.
    显示于类别:[物理學系暨研究所] 學位論文

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