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    題名: 以X光吸收光譜探討Si與Bi雙摻雜之CaMnO3的電子結構及其於熱電性質之關聯性
    其他題名: X-ray absorption spectroscopy study of the connection between Bi and Si doped CaMnO3 thermal property and electronic structure
    作者: 黃展奕;Huang, Jhan-Yi
    貢獻者: 淡江大學物理學系碩士班
    張經霖;Chang, Chang-Lin
    關鍵詞: CaMnO3;X光吸收光譜近邊緣結構;x-ray absorption spectroscopy
    日期: 2014
    上傳時間: 2015-05-01 16:11:06 (UTC+8)
    摘要: 我們利用X光吸收光譜研究以Bi及Si雙摻雜的CaMnO3熱電材料之電子結構。從O K-edge光譜中可看出2%摻雜之樣品其Mn3d-O2p混成軌域最強,從Mn L2,3-edge光譜可看出Mn+4 Mn+3的比例也是2%摻雜之樣品最高,從Ca L2,3-edge光譜中發現Ca的3d在所有摻雜量下空軌域都是下降的,從Mn K-edge光譜中發現Mn 4p的空軌域數在所有摻雜量都是增加的,從光譜結果可知導電層(MnO2層)載子濃度因摻雜Bi及Si後有增加的趨勢。熱電性質相關物性的量測顯示2%摻雜之樣品電阻、熱導率及熱電力皆最低,而優質係數則最高。我們將對摻雜Bi及Si導致電子結構改變及其對熱電性質的影響機制進行較深入的討論。
    We use X-ray absorption spectroscopy to study the electronic structure of Bi and Si-doped double CaMnO3 thermoelectric materials. From the O K-edge spectra can be seen 2% doped sample its Mn3d-O2p hybrid orbitals strongest from Mn L2 ,3-edge spectra can be seen the proportion of Mn +4 Mn +3 is also 2% doped the highest sample found from Ca L2 ,3-edge spectra of Ca doping in all 3d orbitals are empty decline, found several empty orbitals of all doping Mn 4p from Mn K-edge spectrum are added, the result shows that the conductive layer from the spectrum (MnO2 layer) due to the carrier concentration and the Si-doped Bi after increasing trend. Thermoelectric properties of nature-related measurements showed a 2% doped sample resistance, thermal conductivity and thermal electricity are the lowest, and the highest quality coefficient. Si-doped Bi and we will cause changes in the electronic structure and its impact on the thermoelectric properties of the mechanism for a more in-depth discussion.
    顯示於類別:[物理學系暨研究所] 學位論文

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