English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 51776/87004 (60%)
造訪人次 : 8382825      線上人數 : 46
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100158

    題名: The role of nanographitic phase on enhancing the electron field emission properties of hybrid granular structured diamond films: the electron energy loss spectroscopic studies
    作者: Joji Kurian;Kamatchi Jothiramalingam Sankaran;Joseph P Thomas;Tai, N H;Chen, Huang-Chin;Lin, I-Nan;林諭男
    貢獻者: 淡江大學物理學系
    日期: 2014-10
    上傳時間: 2015-02-03 16:40:08 (UTC+8)
    出版者: Bristol: Institute of Physics Publishing Ltd.
    摘要: The electron field emission (EFE) properties of the hybrid granular structured diamond (HiD) films were markedly improved by N-ion implantation and annealing processes. The evolution of microstructure/bonding structure of the films due to these processes was investigated using the transmission electron microscopy (TEM) and the electron energy loss spectroscopy (EELS), respectively. The N-ion implanted/annealed HiD films showed a low turn-on field of (E0)HiD = 7.4 V µm−1 with large current density of (Je)HiD = 600 µA cm−2, at 17.8 V µm−1, compared with pristine HiD films ((E0) = 10.3 V µm−1, (Je) = 95 µA cm−2 at the same applied field). While the TEM studies revealed only the microstructural evolution due to N-ion implantation/annealing processes, the EELS elucidated the change in bonding structure, namely the transformation between the sp3-bonded carbons and the sp2-bonded ones. Therefore, the combined TEM/EELS analyses provided more insight into understand the mechanism by which the N-ion implantation/annealing processes enhanced the EFE properties of HiD films. These studies clearly demonstrated that the N-ion implantation/annealing processes induced the formation of nanographitic clusters. These nanographitic phases form an interconnected path throughout the film surface facilitating the easy transport of electrons and thereby markedly enhancing the EFE properties for the N implanted/annealed HiD films.
    關聯: Journal of Physics D: Applied Physics 47(41), 415303(14pages)
    DOI: 10.1088/0022-3727/47/41/415303
    顯示於類別:[物理學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋