淡江大學機構典藏:Item 987654321/100157
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/100157


    Title: The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect
    Authors: Lin, Sheng-Chang;Yeh, Chien-Jui;Joji Kurian;Dong, Chung-Li;Huan Niu;Leou, Keh-Chyang;Lin, I.-Nan;林諭男
    Contributors: 淡江大學物理學系
    Date: 2014-01-01
    Issue Date: 2015-02-03 16:39:01 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. The difference of interaction that the UNCD content undergoes along the trajectory of the incident P-ions is reflected in the alteration of the granular structure. In regions where the P-ions reside, the “interacting zone,” which is found at about 300 nm beneath the surface of the films, coalescence of diamond grains occurs inducing nano-graphitic clusters. The annealing at 600 °C (or 800 °C) heals the defects and, in some cases, forms interconnected graphitic filaments that result in the decrease in surface resistance. However, the annealing at 600 °C (800 °C) induces marked UNCD-to-Si layers interaction. This interaction due to the annealing processes hinders the electron transport across the interface and degrades the electron field emission properties of the UNCD films. These microstructural evolution processes very well account for the phenomenon elaborating that, in spite of enhanced conductivity of the UNCD films along the film's surface due to the P-ion implantation and annealing processes, the electron field emission properties for these UNCD films do not improve.
    Relation: Journal of Applied Physics 116, 183701(11pages)
    DOI: 10.1063/1.4901333
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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