English  |  正體中文  |  简体中文  |  Items with full text/Total items : 51510/86705 (59%)
Visitors : 8269883      Online Users : 82
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100157

    Title: The microstructural evolution of ultrananocrystalline diamond films due to P ion implantation process—the annealing effect
    Authors: Lin, Sheng-Chang;Yeh, Chien-Jui;Joji Kurian;Dong, Chung-Li;Huan Niu;Leou, Keh-Chyang;Lin, I.-Nan;林諭男
    Contributors: 淡江大學物理學系
    Date: 2014-01-01
    Issue Date: 2015-02-03 16:39:01 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: The microstructural evolution of UNCD films which are P-ion implanted and annealed at 600 °C (or 800 °C) is systematically investigated. The difference of interaction that the UNCD content undergoes along the trajectory of the incident P-ions is reflected in the alteration of the granular structure. In regions where the P-ions reside, the “interacting zone,” which is found at about 300 nm beneath the surface of the films, coalescence of diamond grains occurs inducing nano-graphitic clusters. The annealing at 600 °C (or 800 °C) heals the defects and, in some cases, forms interconnected graphitic filaments that result in the decrease in surface resistance. However, the annealing at 600 °C (800 °C) induces marked UNCD-to-Si layers interaction. This interaction due to the annealing processes hinders the electron transport across the interface and degrades the electron field emission properties of the UNCD films. These microstructural evolution processes very well account for the phenomenon elaborating that, in spite of enhanced conductivity of the UNCD films along the film's surface due to the P-ion implantation and annealing processes, the electron field emission properties for these UNCD films do not improve.
    Relation: Journal of Applied Physics 116, 183701(11pages)
    DOI: 10.1063/1.4901333
    Appears in Collections:[物理學系暨研究所] 期刊論文

    Files in This Item:

    There are no files associated with this item.

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback