淡江大學機構典藏:Item 987654321/100153
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/100153


    Title: Enhancement of the Electron Field Emission Properties of Ultrananocrystalline Diamond Films via Hydrogen Post-Treatment
    Authors: Kamatchi Jothiramalingam Sankaran;Srinivasu Kunuku;Leou, Keh-Chyang;Tai, Nyan-Hwa;Lin, I-Nan;林諭男
    Contributors: 淡江大學物理學系
    Keywords: ultrananocrystalline diamond films;hydrogen post-treatments;electron field emission;plasma illumination;electron energy loss spectroscopy
    Date: 2014-08
    Issue Date: 2015-02-03 16:33:57 (UTC+8)
    Publisher: Washington, DC: American Chemical Society
    Abstract: Enhanced electron field emission (EFE) properties due to hydrogen post-treatment at 600 °C have been observed for ultrananocrystalline diamond (UNCD) films. The EFE properties of H2-gas-treated UNCD films could be turned on at a low field of 5.3 V/μm, obtaining an EFE current density of 3.6 mA/cm2 at an applied field of 11.7 V/μm that is superior to those of UNCD films treated with H2 plasma. Transmission electron microscopic investigations revealed that H2 plasma treatment induced amorphous carbon (a-C) (and graphitic) phases only on the surface region of the UNCD films but the interior region of the UNCD films still contained very small amounts of a-C (and graphitic) grain boundary phases, resulting in a resistive transport path and inferior EFE properties. On the other hand, H2 gas treatment induces a-C (and graphitic) phases along the grain boundary throughout the thickness of the UNCD films, resulting in creation of conduction channels for the electrons to transport from the bottom of the films to the top and hence the superior EFE properties.
    Relation: ACS Applied Materials & Interfaces 6(16), pp.14543−14551
    DOI: 10.1021/am503823n
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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