Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process

機構典藏 > College of Engineering > Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering > Journal Article > Item 987654321/100110

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Title:	Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process
Authors:	Tseng, Jian-Zhi;Wu, Chyan-Chyi;Dai, Ching-Liang
Contributors:	淡江大學機械與機電工程學系
Keywords:	magnetic sensor;magneto-transistor;CMOS
Date:	2014-04-11
Issue Date:	2015-01-28 11:07:45 (UTC+8)
Publisher:	Switzerland: M D P I AG
Abstract:	The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.
Relation:	Sensors 14(4), pp.6722-6733
DOI:	10.3390/s140406722
Appears in Collections:	[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Journal Article

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