淡江大學機構典藏:Item 987654321/100086
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62822/95882 (66%)
造访人次 : 4019011      在线人数 : 1074
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/100086


    题名: Natural substrate lift-off technique for vertical light-emitting diodes
    作者: Lee, Chia-Yu;Lan, Yu-Pin;Tu, Po-Min;Hsu, Shih-Chieh;Lin, Chien-Chung;Kuo, Hao-Chung;Chi, Gou-Chung;Chang, Chun-Yen
    贡献者: 淡江大學化學工程與材料工程學系
    日期: 2014-03-14
    上传时间: 2015-01-28 11:07:02 (UTC+8)
    出版者: Japan: Japan Society of Applied Physics
    摘要: Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm−2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.
    關聯: Applied Physics Express 7(4), 042103(4 pages)
    DOI: 10.7567/APEX.7.042103
    显示于类别:[化學工程與材料工程學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML277检视/开启
    Lee_2014_Appl._Phys._Express_7_042103.pdf786KbAdobe PDF1检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈