Natural substrate lift-off technique for vertical light-emitting diodes

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Title:	Natural substrate lift-off technique for vertical light-emitting diodes
Authors:	Lee, Chia-Yu;Lan, Yu-Pin;Tu, Po-Min;Hsu, Shih-Chieh;Lin, Chien-Chung;Kuo, Hao-Chung;Chi, Gou-Chung;Chang, Chun-Yen
Contributors:	淡江大學化學工程與材料工程學系
Date:	2014-03-14
Issue Date:	2015-01-28 11:07:02 (UTC+8)
Publisher:	Japan: Japan Society of Applied Physics
Abstract:	Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm−2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.
Relation:	Applied Physics Express 7(4), 042103(4 pages)
DOI:	10.7567/APEX.7.042103
Appears in Collections:	[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

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