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    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100086

    題名: Natural substrate lift-off technique for vertical light-emitting diodes
    作者: Lee, Chia-Yu;Lan, Yu-Pin;Tu, Po-Min;Hsu, Shih-Chieh;Lin, Chien-Chung;Kuo, Hao-Chung;Chi, Gou-Chung;Chang, Chun-Yen
    貢獻者: 淡江大學化學工程與材料工程學系
    日期: 2014-03-14
    上傳時間: 2015-01-28 11:07:02 (UTC+8)
    出版者: Japan: Japan Society of Applied Physics
    摘要: Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm−2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.
    關聯: Applied Physics Express 7(4), 042103(4 pages)
    DOI: 10.7567/APEX.7.042103
    顯示於類別:[化學工程與材料工程學系暨研究所] 期刊論文


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