淡江大學機構典藏:Item 987654321/100072
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62805/95882 (66%)
造访人次 : 3933246      在线人数 : 464
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/100072


    题名: Excellent piezoelectric and electrical properties of lithium-doped ZnO nanowires for nanogenerator applications
    作者: Chang, Yu-Tsui;Chen, Jui-Yuan;Yang, Tzu-Ping;Huang, Chun-Wei;Chiu, Chung-Hua;Yeh, Ping-Hung;Wu, Wen-Wei
    贡献者: 淡江大學物理學系
    关键词: ZnO;Lithium-doped;Piezoelectric property;Hydrothermal method;Magnetization
    日期: 2014-06-23
    上传时间: 2015-01-28 11:04:59 (UTC+8)
    出版者: Netherlands: Elsevier BV
    摘要: The well-aligned Li-doped zinc oxide nanowires (ZnO NWs) were successfully grown on Si substrates with seed layer by the hydrothermal method. The presence of Li in ZnO NWs is confirmed through EELS spectrum analysis. The acceptor energy level of the Li dopant is estimated to be 93.6 meV from the temperature-dependent PL spectra. From the SQUID measurements, the coercivity and saturation magnetization of the Li-doped ZnO NWs at room temperature are found to be 166 Oe and 9.64 memu/g, respectively. Additionally, the Li-doped ZnO NWFET confirms that the NWs were p-type with a high carrier mobility of 14.59 cm2/V s and an effective hole carrier concentration of 1.13×1017 cm−3. The piezoelectric response of the Li-doped ZnO NWs produces much higher piezoelectric output current, voltage, and power than pure ZnO NWs. These results indicated that p-type ZnO NWs are a promising candidate for nanogenerator devices.
    關聯: Nano Energy 8, pp.291-296
    DOI: 10.1016/j.nanoen.2014.06.014
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    index.html0KbHTML293检视/开启
    index.html館藏資訊0KbHTML191检视/开启
    index.html0KbHTML166检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈