Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties

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题名:	Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties
作者:	A. P. Thomas;Chen. H. C.;Tseng, H. H.;Wu, H. C.;Lee, C. Y.;Cheng, H. F.;Tai, N. H.;Lin, I. N.
贡献者:	淡江大學物理學系
日期:	2012-10-24
上传时间:	2015-01-28 11:04:53 (UTC+8)
出版者:	Royal Society of Chemistry
摘要:	The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 °C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.
關聯:	ACS Applied Materials & Interfaces 4(10), pp.5103-5108
DOI:	10.1021/am3016203
显示于类别:	[物理學系暨研究所] 期刊論文

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