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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100069

    Title: Preferentially Grown Ultranano c-Diamond and n-Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties
    Authors: A. P. Thomas;Chen. H. C.;Tseng, H. H.;Wu, H. C.;Lee, C. Y.;Cheng, H. F.;Tai, N. H.;Lin, I. N.
    Contributors: 淡江大學物理學系
    Date: 2012-10-24
    Issue Date: 2015-01-28 11:04:53 (UTC+8)
    Publisher: Royal Society of Chemistry
    Abstract: The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 °C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.
    Relation: ACS Applied Materials & Interfaces 4(10), pp.5103-5108
    DOI: 10.1021/am3016203
    Appears in Collections:[物理學系暨研究所] 期刊論文

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