Fabrication of free-standing highly conducting ultrananocrystalline diamond films with enhanced electron field emission properties

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/100067

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題名:	Fabrication of free-standing highly conducting ultrananocrystalline diamond films with enhanced electron field emission properties
作者:	K.J. Sankaran;Chen, H.C.;Lee, C.Y.;Tai, N.H.;Lin, I.N.
貢獻者:	淡江大學物理學系
日期:	2012-12-10
上傳時間:	2015-01-28 11:04:50 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	Fabrication of free-standing/highly conducting ultrananocrystalline diamond (fc-UNCD) films at low growth temperature (<475 °C) is demonstrated. The fc-UNCD films show high conductivity of σ = 146 (Ω cm)−1 with superior electron field emission (EFE) properties, viz. low turn-on field of 4.35 V/μm and high EFE current density of 3.76 mA/cm2 at an applied field of 12.5 V/μm. Transmission electron microscopy examinations reveal the presence of Au/Cu clusters in film-to-substrate interface, which consequences in the induction of nanographite phases, surrounding the diamond grains that form conduction channels for electrons transport, ensuing in marvelous EFE properties of fc-UNCD films.
關聯:	Applied Physics Letters 101(24), 241604(4pages)
DOI:	10.1063/1.4770513
顯示於類別:	[物理學系暨研究所] 期刊論文

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