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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100067


    Title: Fabrication of free-standing highly conducting ultrananocrystalline diamond films with enhanced electron field emission properties
    Authors: K.J. Sankaran;Chen, H.C.;Lee, C.Y.;Tai, N.H.;Lin, I.N.
    Contributors: 淡江大學物理學系
    Date: 2012-12-10
    Issue Date: 2015-01-28 11:04:50 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: Fabrication of free-standing/highly conducting ultrananocrystalline diamond (fc-UNCD) films at low growth temperature (<475 °C) is demonstrated. The fc-UNCD films show high conductivity of σ = 146 (Ω cm)−1 with superior electron field emission (EFE) properties, viz. low turn-on field of 4.35 V/μm and high EFE current density of 3.76 mA/cm2 at an applied field of 12.5 V/μm. Transmission electron microscopy examinations reveal the presence of Au/Cu clusters in film-to-substrate interface, which consequences in the induction of nanographite phases, surrounding the diamond grains that form conduction channels for electrons transport, ensuing in marvelous EFE properties of fc-UNCD films.
    Relation: Applied Physics Letters 101(24), 241604(4pages)
    DOI: 10.1063/1.4770513
    Appears in Collections:[物理學系暨研究所] 期刊論文

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