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    题名: Fabrication of free-standing highly conducting ultrananocrystalline diamond films with enhanced electron field emission properties
    作者: K.J. Sankaran;Chen, H.C.;Lee, C.Y.;Tai, N.H.;Lin, I.N.
    贡献者: 淡江大學物理學系
    日期: 2012-12-10
    上传时间: 2015-01-28 11:04:50 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: Fabrication of free-standing/highly conducting ultrananocrystalline diamond (fc-UNCD) films at low growth temperature (<475 °C) is demonstrated. The fc-UNCD films show high conductivity of σ = 146 (Ω cm)−1 with superior electron field emission (EFE) properties, viz. low turn-on field of 4.35 V/μm and high EFE current density of 3.76 mA/cm2 at an applied field of 12.5 V/μm. Transmission electron microscopy examinations reveal the presence of Au/Cu clusters in film-to-substrate interface, which consequences in the induction of nanographite phases, surrounding the diamond grains that form conduction channels for electrons transport, ensuing in marvelous EFE properties of fc-UNCD films.
    關聯: Applied Physics Letters 101(24), 241604(4pages)
    DOI: 10.1063/1.4770513
    显示于类别:[物理學系暨研究所] 期刊論文

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